منابع مشابه
Electron-trapping polycrystalline materials with negative electron affinity.
The trapping of electrons by grain boundaries in semiconducting and insulating materials is important for a wide range of physical problems, for example, relating to: electroceramic materials with applications as sensors, varistors and fuel cells, reliability issues for solar cell and semiconductor technologies and electromagnetic seismic phenomena in the Earth's crust. Surprisingly, considerin...
متن کاملPatterned negative electron affinity photocathodes for maskless electron beam lithography
This work focuses on two issues crucial to achieving high throughput with a negative electron affinity semiconductor photocathode source. Monte Carlo simulations indicate that for a 50 kV system, as much as 8 mA of current may be delivered to the wafer to achieve a raw throughput of 20 8 in. wafers per hour with 0.1 mm minimum feature size ~assuming a resist sensitivity of 10 mC/cm!. In order t...
متن کاملAtomic Hydrogen Cleaning of InP(100): Electron Yield and Surface Morphology of Negative Electron Affinity Activated Surfaces
This Article is brought to you for free and open access by the Electrical & Computer Engineering at ODU Digital Commons. It has been accepted for inclusion in Electrical & Computer Engineering Faculty Publications by an authorized administrator of ODU Digital Commons. For more information, please contact [email protected]. Repository Citation Hafez, M. A. and Elsayed-Ali, H. E., "Atomic Hy...
متن کاملNegative electron affinity and electron emission at cesiated GaN and AlN surfaces
Ž . Ž . The electronic structure of GaN and AlN 0001 surfaces and modification by cesium Cs adsorption are investigated via Ž . Ž . ultra-violet and X-ray photoemission spectroscopy UPS, XPS and total yield spectroscopy. The electron affinity EA of the clean and ordered 1=1 surfaces is found to be equal to 3.3 and 1.9 eV for GaN and AlN, respectively. Cs adsorption Ž . with the help of oxygen p...
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ژورنال
عنوان ژورنال: Hyomen Kagaku
سال: 1981
ISSN: 0388-5321,1881-4743
DOI: 10.1380/jsssj.2.244